0

2

4

6

8

10

12

14

16

18

0

2

4

6

8

10

12

G001

0

2

4

6

8

10

0

5

10

15

20

G001

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

CSD17552Q3A

www.ti.com

SLPS387 – SEPTEMBER 2012

30V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD17552Q3A

1

FEATURES

PRODUCT SUMMARY

•

Ultra Low Qg and Qgd

Drain to Source Voltage

30

V

•

Low Thermal Resistance

Gate Charge Total (4.5V)

9.0

nC

•

Avalanche Rated

Gate Charge Gate to Drain

2.3

nC

6.5

m

Ω

•

Pb Free Terminal Plating

Drain to Source On Resistance

5.5

m

Ω

•

RoHS Compliant

Threshold Voltage

1.5

V

•

Halogen Free

•

SON 3.3-mm × 3.3-mm Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

SON 3.3-mm × 3.3-

13-Inch

Tape and

CSD17552Q3A

2500

mm Plastic Package

Reel

Reel

•

Point of load Synchronous Buck in

Networking, Telecom and Computing Systems

ABSOLUTE MAXIMUM RATINGS

•

Optimized for Control FET Applications

VALUE

UNIT

Drain to Source Voltage

30

V

DESCRIPTION

Gate to Source Voltage

±20

V

The NexFET power MOSFET has been designed to

60

A

minimize losses in power conversion applications.

Continuous Drain Current, Silicon Limitted

74

A

Figure 1. Top View

(1)

15

A

(2)

84

A

Power Dissipation(1)

2.6

W

Operating Junction and Storage

–55 to 150

°C

Temperature Range

Avalanche Energy, single pulse

45

mJ

(1) Typical

=

48°C/W

on

a

2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick

FR4 PCB.

(2) Pulse duration

≤300μs, duty cycle ≤2%

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Copyright © 2012, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.