1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

MMBD6050LT1 = 5AM

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 µAdc)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current

(VR = 50 Vdc)

IR

—

0.1

µAdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 100 mAdc)

VF

0.55

0.85

0.7

1.1

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)

trr

—

4.0

ns

Capacitance (VR = 0 V)

C

—

2.5

pF

1. FR– 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

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by MMBD6050LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBD6050LT1

1

2

3

CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)

3

CATHODE

1

ANODE

REV 1