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ADT14GP Datasheet(PDF) 3 Page - Analog Devices |
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ADT14GP Datasheet(HTML) 3 Page - Analog Devices |
3 / 16 page ADT14 –3– REV. 0 WAFER TEST LIMITS Parameter Symbol Conditions Min Typ Max Units INPUTS SET HIGH, SET LOW Input Bias Current IB 70 nA OUTPUT VPTAT Temperature Accuracy TA = +25 °C, No Load 1.5 °C OUTPUT VREF Nominal Value VREF TA = +25°C, No Load 2.490 2.510 V Line Regulation 4.5 V ≤ V ≤ 13.2 V ±0.08 %/V Load Regulation 10 µA ≤ IV REF ≤ 500 µA ±0.25 %/mA OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage VOL ISINK = 1.6 mA 0.4 V Output Leakage Current IOH 100 µA POWER SUPPLY Supply Range V+ 4.5 5.5 V Supply Current ISY Unloaded 600 µA NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly and nominal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on lot qualification through sample lot assembly and testing. DICE CHARACTERISTICS Die Size 0.069 × 0.080 inch, 5520 sq. mils (1.75 × 2.03 mm, 3.55 sq. mm) Transistor Count: 130 (V+ = +5 V, GND = 0 V, TA = +25 C unless otherwise noted) WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADT14 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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