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ADN2850 Datasheet(PDF) 2 Page - Analog Devices

Part No. ADN2850
Description  Nonvolatile Memory, Dual 1024 Position Programmable Resistors
Download  20 Pages
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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ADN2850 Datasheet(HTML) 2 Page - Analog Devices

 
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REV. B
–2–
ADN2850–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS 25 k , 250 k
VERSIONS
Parameter
Symbol
Conditions
Min
Typ
2
Max
Unit
DC CHARACTERISTICS RHEOSTAT MODE (Specifications apply to all RDACs)
Resistor Differential Nonlinearity
3
R-DNL
RWB
–2
+2
LSB
Resistor Integral Nonlinearity
3
R-INL
RWB
–4
+4
LSB
Resistance Temperature Coefficient
RWB/ T
35
ppm/
°C
Wiper Resistance
RW
VDD = 5 V, IW = 100
µA,
Code = Half-scale
50
100
VDD = 3 V, IW = 100
µA,
Code = Half-scale
200
Channel Resistance Matching
RWB/RWB
Ch 1 and 2 RWB, Dx = 3FFH
0.1
%
Nominal Resistor Tolerance
RWB
–30
+30
%
RESISTOR TERMINALS
Terminal Voltage Range
4
VW, B
VSS
VDD
V
Capacitance
5 Bx
CB
f = 1 MHz, measured to GND,
Code = Half-scale
11
pF
Capacitance
5 Wx
CW
f = 1 MHz, measured to GND,
Code = Half-scale
80
pF
Common-Mode Leakage Current
6
ICM
VW = VB = VDD/2
0.01
±2
µA
DIGITAL INPUTS AND OUTPUTS
Input Logic High
VIH
With respect to GND, VDD = 5 V
2.4
V
Input Logic Low
VIL
With respect to GND, VDD = 5 V
0.8
V
Input Logic High
VIH
With respect to GND, VDD = 3 V
2.1
V
Input Logic Low
VIL
With respect to GND, VDD = 3 V
0.6
V
Input Logic High
VIH
With respect to GND,
VDD = +2.5 V, VSS = –2.5 V
2.0
V
Input Logic Low
VIL
With respect to GND,
VDD = +2.5 V, VSS = –2.5 V
0.5
V
Output Logic High (SDO, RDY)
VOH
RPULL-UP = 2.2 k
Ω to 5 V
4.9
V
Output Logic Low
VOL
IOL = 1.6 mA, VLOGIC = 5 V
0.4
V
Input Current
IIL
VIN = 0 V or VDD
±2.25
µA
Input Capacitance
5
CIL
5pF
POWER SUPPLIES
Single-Supply Power Range
VDD
VSS = 0 V
3.0
5.5
V
Dual-Supply Power Range
VDD/VSS
±2.25
±2.75
V
Positive Supply Current
IDD
VIH = VDD or VIL = GND,
TA = 25
oC2
4.5
µA
Positive Supply Current
IDD
VIH = VDD or VIL = GND
3.5
6.0
µA
Programming Mode Current
IDD(PG)
VIH = VDD or VIL = GND
35
mA
Read Mode Current
7
IDD(XFR)
VIH = VDD or VIL = GND
0.3
3
9
mA
Negative Supply Current
ISS
VIH = VDD or VIL = GND,
VDD = +2.5 V, VSS = –2.5 V
3.5
6.0
µA
Power Dissipation
8
PDISS
VIH = VDD or VIL = GND
18
50
µW
Power Supply Sensitivity
PSS
∆VDD = 5 V ± 10%
0.002
0.01
%/%
CURRENT MONITOR TERMINALS
Current Sink at V1
9
I1
0.0001
10
mA
Current Sink at V2
I2
10
mA
DYNAMIC CHARACTERISTICS
5, 10
Resistor Noise Spectral Density
eN_WB
RWB_FS = 25 k
Ω/250 kΩ, f = 1 kHz
20/64
nV/
√Hz
Analog Crosstalk (CW1/CW2)CT
VB1 = VB2 = 0 V, Measured VW1 with
VW2 = 100 mV p-p @ f = 100 kHz,
Code 1 = Code 2 = 200H
–65
dB
(VDD = 3 V to 5.5 V and –40 C < TA < +85 C,
unless otherwise noted.)
1


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