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AOTF11N70 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOTF11N70 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 0.87 Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N70L & AOTF11N70L Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. A W W/ oC °C mJ V/ns °C Maximum Case-to-sink A Maximum Junction-to-Case mJ °C/W °C/W Derate above 25 oC Parameter AOT11N70 AOTF11N70 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 700 ID 5 50.0 271 7.2 11* 7.2* The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOT11N70 AOTF11N70 800V@150℃ Drain-Source Voltage V ±30 Gate-Source Voltage TC=100°C A 43 Pulsed Drain Current C Continuous Drain Current TC=25°C 11 Avalanche Current C 120 Single plused avalanche energy G 240 4 Repetitive avalanche energy C Junction and Storage Temperature Range Maximum Junction-to-Ambient A,D Power Dissipation B PD TC=25°C Thermal Characteristics 300 -55 to 150 2.1 0.4 0.46 -- Units °C/W 65 0.5 65 2.5 Top View TO-220F TO-220 G D S G D S G D S Rev 0: March 2010 www.aosmd.com Page 1 of 6 |
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Similar Description - AOTF11N70 |
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