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ADM3311E Datasheet(PDF) 9 Page - Analog Devices |
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ADM3311E Datasheet(HTML) 9 Page - Analog Devices |
9 / 12 page ADM3311E –9– REV. A D1 D2 Tx TRANSMITTER OUTPUT Figure 21b. Transmitter Output Protection Scheme ESD TESTING (IEC1000-4-2) IEC1000-4-2 (previously 801-2) specifies compliance testing using two coupling methods, contact discharge and air-gap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage but does not make direct contact with the unit under test. With air discharge, the discharge gun is moved toward the unit under test, developing an arc across the air gap, hence the term air discharge. This method is influenced by humidity, temperature, barometric pressure, distance and rate of closure of the discharge gun. The contact-discharge method, while less realistic, is more repeatable and is gaining acceptance in preference to the air-gap method. Although very little energy is contained within an ESD pulse, the extremely fast rise time coupled with high voltages can cause failures in unprotected semiconductors. Catastrophic destruc- tion can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation, which may result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. I-O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I-O cable can result in a static dis- charge that can damage or completely destroy the interface product connected to the I-O port. Traditional ESD test meth- ods such as the MIL-STD-883B method 3015.7 do not fully test a product’s susceptibility to this type of discharge. This test was intended to test a product’s susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the tradi- tional test and the IEC test: (a) The IEC test is much more stringent in terms of discharge energy. The peak current injected is over four times greater. (b) The current rise time is significantly faster in the IEC test. (c) The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device under test. This test is therefore more representative of a real-world I-O discharge where the equipment is operating nor- mally with power applied. For maximum peace of mind however, both tests should be performed, thus ensuring maximum protec- tion both during handling and later, during field service. R1 R2 C1 DEVICE UNDER TEST HIGH VOLTAGE GENERATOR ESD TEST METHOD R2 C1 H. BODY MIL-STD883B 1.5k 100pF IEC1000-4-2 330 150pF Figure 22. ESD Test Standards 100 90 36.8 10.0 TIME t tDL tRL Figure 23. Human Body Model ESD Current Waveform 100 90 10 TIME t 30ns 60ns 0.1 TO 1ns Figure 24. IEC1000-4-2 ESD Current Waveform The ADM3311E is tested using both of the above-mentioned test methods. All pins are tested with respect to all other pins as per the MIL-STD-883B specification. In addition, all I-O pins are tested as per the IEC test specification. The products were tested under the following conditions: (a) Power-On—Normal Operation (b) Power-Off Four levels of compliance are defined by IEC1000-4-2. The ADM3311E meets the most stringent compliance level for con- tact discharge. This means that the products are able to with- stand contact discharges in excess of 8 kV. Table II. IEC1000-4-2 Compliance Levels Contact Discharge Air Discharge Level (kV) (kV) 12 2 24 4 36 8 48 15 Table III. ADM3311E ESD Test Results ESD Test Method I-O Pins (kV) Other Pins (kV) MIL-STD-883B ±15 ±3 IEC1000-4-2 Contact ±8 |
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