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ADM223 Datasheet(PDF) 2 Page - Analog Devices

Part No. ADM223
Description  5 V Powered CMOS RS-232 Drivers/Receivers
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Maker  AD [Analog Devices]
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ADM223 Datasheet(HTML) 2 Page - Analog Devices

 
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REV. 0
–2–
ADM223/ADM230L–ADM241L–SPECIFICATIONS
VCC = +5 V
5% (ADM230L, 33L, 35L, 37L); V+ = 7.5 V to 13.2 V (ADM231L & ADM239L); C1–C4 = 1.0
F Ceramic. All Specifications TMIN to
TMAX unless otherwise noted.)
Parameter
Min
Typ
Max Units Test Conditions/Comments
Output Voltage Swing
±5
±9
Volts
All Transmitter Outputs Loaded with 3 k
Ω to Ground
VCC Power Supply Current
2
3.0
mA
No Load, All TINS = VCC (Except ADM223)
3.5
6
mA
No Load, All TINS = GND
0.4
1
mA
ADM231L, ADM239L
V+ Power Supply Current
1.5
4
mA
No Load, V+ = 12 V ADM231L & ADM239L Only
Shutdown Supply Current
1
5
µA
Input Logic Threshold Low, VINL
0.8
V
TIN, EN, SD, EN, SD
Input Logic Threshold High, VINH
2.0
V
TIN, EN, SD, EN, SD
Logic Pull-Up Current
10
25
µAT
IN = 0 V
RS-232 Input Voltage Range
–30
+30
V
RS-232 Input Threshold Low
0.8
1.2
V
RS-232 Input Threshold High
1.7
2.4
V
RS-232 Input Hysteresis
0.2
0.5
1.0
V
RS-232 Input Resistance
3
5
7
k
TTL/CMOS Output Voltage Low, VOL
0.4
V
TTL/CMOS Output Voltage High, VOH
3.5
V
IOUT = –1.0 mA
TTL/CMOS Output Leakage Current
0.05
±5
µA
EN = VCC, 0 V
≤ R
OUT
≤ V
CC
Output Enable Time (TEN)
250
ns
ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. CL = 150 pF)
Output Disable Time (TDIS)
50
ns
ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. RL = 1 k
Ω)
Propagation Delay
0.5
µs
RS-232 to TTL
Instantaneous Slew Rate
1
25
30
V/
µsC
L = 10 pF, RL = 3-7 k
Ω, T
A = +25
°C
Transition Region Slew Rate
5
V/
µsR
L = 3 kΩ, CL = 2500 pF
Measured from +3 V to –3 V or –3 V to +3 V
Output Resistance
300
VCC = V+ = V– = 0 V, VOUT = ± 2 V
RS-232 Output Short Circuit Current
±10
mA
NOTE
1Sample tested to ensure compliance.
Specifications subject to change without notice.
Thermal Impedance,
θ
JA
N-14 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
°C/W
N-16 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
°C/W
N-20 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
°C/W
N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
°C/W
N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
°C/W
R-16 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
°C/W
R-20 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
°C/W
R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
°C/W
R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
°C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
°C/W
Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
°C/W
D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
°C/W
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . . 0 to +70
°C
Industrial (A Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65
°C to + 150°C
Lead Temperature, Soldering . . . . . . . . . . . . . . . . . . +300
°C
Vapour Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for
extended periods of time may affect reliability.
VCC = +5 V
10% (ADM223, 31L,
32L, 34L, 36L, 38L, 39L, 41L);
ABSOLUTE MAXIMUM RATINGS*
(TA = 25°C unless otherwise noted)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC – 0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
TIN . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V
Output Voltages
TOUT . . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, – 0.3 V)
ROUT . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
Short Circuit Duration
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous
Power Dissipation
N-14 DIP (Derate 10 mW/
°C above +70°C) . . . . . 800 mW
N-16 DIP (Derate 10.5 mW/
°C above +70°C) . . . 840 mW
N-20 DIP (Derate 11 mW/
°C above +70°C) . . . . . 890 mW
N-24 DIP (Derate 13.5 mW/
°C above +70°C) . . 1000 mW
N-24A DIP (Derate 13.5 mW/
°C above +70°C) . . 500 mW
R-16 SOIC (Derate 9 mW/
°C above +70°C) . . . . . 760 mW
R-20 SOIC (Derate 9.5 mW/
°C above +70°C) . . . 800 mW
R-24 SOIC (Derate 12 mW/
°C above +70°C) . . . . 850 mW
R-28 SOIC (Derate 12.5 mW/
°C above +70°C) . . 900 mW
RS-28 SSOP (Derate 10 mW/
°C above +70°C) . . . 900 mW
Q-14 Cerdip (Derate 10 mW/
°C above +70°C) . . . 720 mW
Q-16 Cerdip (Derate 10 mW/
°C above +70°C) . . . 800 mW
Q-20 Cerdip (Derate 11.2 mW/
°C above +70°C) . . . 890 mW
Q-24 Cerdip (Derate 12.5 mW/
°C above +70°C) . . 1000 mW
D-24 Ceramic (Derate 20 mW/
°C above +70°C) . . 1000 mW


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