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MJH6282 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MJH6282
Description  DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJH6282 Datasheet(HTML) 3 Page - Motorola, Inc

   
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MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.03
0.7
0.2
0.1
0.05
0.02
0.05
1.0
3.0
5.0
10
30
50
100
300
500
R
θJC(t) = r(t) RθJC
R
θJC = 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1
0.5
0.2
1000
0.5
0.3
0.07
0.03
0.01
0.02
2.0
20
200
0.3
0.2
0.1
0.05
0.02
0.01
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
TJ = 150°C
0.5 ms
Figure 5. MJH6282, MJH6285
Figure 6. MJH6283, MJH6286
Figure 7. MJH6284, MJH6287
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150°C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150°C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
FBSOA, FORWARD BIAS SAFE OPERATING AREA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
50
60
10
20
80
40
40
10
DUTY CYCLE = 10%
30
20
30
110
100
0
Figure 8. Maximum RBSOA, Reverse Bias
Safe Operating Area
L = 200
µH
IC/IB ≥ 100
TC = 25°C
VBE(off) = 0 – 5.0 V
RBE = 47 Ω
MJH6282, 6285
MJH6283, 6286
MJH6284, 6287
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5, 6 and 7 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150 _C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.


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