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AOT8N80 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOT8N80 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOT8N80/AOTF8N80 Symbol Min Typ Max Units 800 900 BVDSS /∆TJ 0.86 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.3 3.9 4.5 V RDS(ON) 1.35 1.63 Ω gFS 9 S VSD 0.72 1 V IS Maximum Body-Diode Continuous Current 7.4 A ISM 26 A Ciss 1100 1375 1650 pF Coss 70 101 132 pF Crss 6 11 16 pF Rg 1.7 3.5 5.3 Ω Qg 20 26 32 nC Qgs 7.3 nC Qgd 9.1 nC tD(on) 35 ns tr 51 ns tD(off) 69 ns VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=4A Forward Transconductance Diode Forward Voltage Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions VDS=5V, ID=250µA VDS=640V, TJ=125°C Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current VDS=800V, VGS=0V BVDSS ID=250µA, VGS=0V µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-Off DelayTime VGS=10V, VDS=400V, ID=8A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Reverse Transfer Capacitance ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Gate Drain Charge Total Gate Charge VGS=10V, VDS=640V, ID=8A Gate Source Charge Static Drain-Source On-Resistance VGS=10V, ID=4A tD(off) 69 ns tf 41 ns trr 380 484 585 ns Qrr 4.5 6 7.5 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=8A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V Turn-Off DelayTime RG=25Ω Turn-Off Fall Time Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, I AS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev0: Jun 2012 www.aosmd.com Page 2 of 6 |
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