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AOT8N80 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOT8N80
Description  800V, 7.4A N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOT8N80 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AOT8N80/AOTF8N80
Symbol
Min
Typ
Max
Units
800
900
BVDSS
/∆TJ
0.86
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3.3
3.9
4.5
V
RDS(ON)
1.35
1.63
gFS
9
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
7.4
A
ISM
26
A
Ciss
1100
1375
1650
pF
Coss
70
101
132
pF
Crss
6
11
16
pF
Rg
1.7
3.5
5.3
Qg
20
26
32
nC
Qgs
7.3
nC
Qgd
9.1
nC
tD(on)
35
ns
tr
51
ns
tD(off)
69
ns
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
IS=1A,VGS=0V
VDS=40V, ID=4A
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
VDS=5V, ID=250µA
VDS=640V, TJ=125°C
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
VDS=800V, VGS=0V
BVDSS
ID=250µA, VGS=0V
µA
VDS=0V, VGS=±30V
V
Drain-Source Breakdown Voltage
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=8A,
RG=25Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Reverse Transfer Capacitance
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Gate Drain Charge
Total Gate Charge
VGS=10V, VDS=640V, ID=8A
Gate Source Charge
Static Drain-Source On-Resistance
VGS=10V, ID=4A
tD(off)
69
ns
tf
41
ns
trr
380
484
585
ns
Qrr
4.5
6
7.5
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=8A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
Turn-Off DelayTime
RG=25Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev0: Jun 2012
www.aosmd.com
Page 2 of 6


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