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AOT5N100 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT5N100 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 4A RDS(ON) (at VGS=10V) < 4.2 Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT5N100L & AOTF5N100L Symbol VDS The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 1100@150℃ Drain-Source Voltage 1000 AOT5N100 AOTF5N100 G D S AOT5N100 G D S G D S Top View TO-220F TO-220 AOTF5N100 VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. Avalanche Current C 117 Single pulsed avalanche energy G 235 Parameter Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Junction and Storage Temperature Range Derate above 25 oC Repetitive avalanche energy C TC=25°C Thermal Characteristics 5 Power Dissipation B PD V/ns mJ V ±30 Gate-Source Voltage TC=100°C A 15 Pulsed Drain Current C Continuous Drain Current TC=25°C ID 4 2.5 4* 2.5* 42 0.3 2.8 °C/W Units A °C mJ W W/ oC °C/W 300 -55 to 150 195 1.6 °C AOT5N100 AOTF5N100 °C/W 0.64 65 3 Maximum Junction-to-Case Maximum Case-to-sink A 0.5 -- Maximum Junction-to-Ambient A,D 65 Rev1: Aug 2012 www.aosmd.com Page 1 of 6 |
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Similar Description - AOT5N100 |
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