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AOT3N60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT3N60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  AOT3N60 600V,2.5A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 2.5A RDS(ON) (at VGS=10V) <3.5 Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N60L Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC A W W/ oC °C mJ V/ns °C Maximum Case-to-sink A Maximum Junction-to-Case mJ °C/W °C/W Derate above 25 oC Parameter Typical Maximum Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds The AOT3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 700V@150℃ Drain-Source Voltage 600 Maximum V ±30 Gate-Source Voltage TC=100°C A 8 Pulsed Drain Current C Continuous Drain Current TC=25°C ID Avalanche Current C 60 Single pulsed avalanche energy G 120 2 Repetitive avalanche energy C Junction and Storage Temperature Range Maximum Junction-to-Ambient A,D Power Dissipation B PD TC=25°C Thermal Characteristics 300 -55 to 150 0.7 1.2 0.5 Units °C/W 54 - 65 1.5 2.5 1.9 83 5 Top View TO-220 G D S G D S Rev5: May 2011 www.aosmd.com Page 1 of 5 |
Similar Part No. - AOT3N60_11 |
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Similar Description - AOT3N60_11 |
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