AOP605_09 datasheet(6/9 Pages) AOSMD

Part #	AOP605

Description	Complementary Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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AOP605

Symbol

Min

Typ

Max

Units

BVDSS

-30

V

-1

TJ=55°C

-5

IGSS

±100

nA

VGS(th)

-1.2

-2

-2.4

V

ID(ON)

30

A

28

35

TJ=125°C

37

45

44

58

m

Ω

gFS

13

S

VSD

-0.76

-1

V

IS

-4.2

A

Ciss

920

1100

pF

Coss

190

pF

Crss

122

pF

Rg

3.6

4.4

Ω

Qg(10V)

18.5

22.2

nC

Qg(4.5V)

9.6

11.6

nC

Qgs

2.7

nC

Qgd

4.5

nC

tD(on)

7.7

ns

tr

5.7

ns

tD(off)

20.2

ns

tf

9.5

ns

trr

20

24

ns

Qrr

8.8

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

m

Ω

VGS=-4.5V, ID=-5A

Gate Threshold Voltage

VDS=VGS ID=-250µA

On state drain current

VGS=-10V, VDS=-5V

VDS=-5V, ID=-6.6A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

VGS=-10V, ID=-6.6A

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge (10V)

VGS=-10V, VDS=-15V, ID=-6.6A

Turn-On DelayTime

VGS=-10V, VDS=-15V, RL=2.3Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=-6.6A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev 4 : Jan 2009

Alpha Omega Semiconductor, Ltd.

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