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AON7810 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON7810 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AON7810 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=125°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V 11.5 14 TJ=125°C 15.8 19 16 20.5 m Ω gFS 25 S VSD 0.73 1 V IS 6 A Ciss 542 pF Coss 233 pF Crss 31 pF Rg 1 2 3 Ω Qg(10V) 9 12.2 nC Qg(4.5V) 4.3 5.8 nC Qgs 1.6 nC Qgd 2 nC tD(on) 4 ns tr 3.5 ns t 18 ns SWITCHING PARAMETERS Turn-On DelayTime VGS=10V, VDS=15V, RL=2.5Ω, R =3 Ω Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Gate resistance VGS=0V, VDS=0V, f=1MHz IDSS µA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=250 µA, V GS=0V VGS=10V, VDS=15V, ID=6A Total Gate Charge Turn-On Rise Time Turn-Off DelayTime Gate Source Charge Gate Drain Charge Total Gate Charge VDS=0V, VGS=±20V Maximum Body-Diode Continuous Current G Input Capacitance Gate-Body leakage current DYNAMIC PARAMETERS VGS=4.5V, ID=5A RDS(ON) Static Drain-Source On-Resistance Diode Forward Voltage Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz VDS=VGS, ID=250µA Output Capacitance Forward Transconductance m Ω IS=1A,VGS=0V VDS=5V, ID=6A VGS=10V, ID=6A tD(off) 18 ns tf 3.5 ns trr 8.5 ns Qrr 9.0 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RGEN=3Ω IF=6A, dI/dt=500A/µs Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=6A, dI/dt=500A/µs Turn-Off DelayTime Turn-Off Fall Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev0: Aug 2012 www.aosmd.com Page 2 of 6 |
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