PSMN3R7-30YLC datasheet(2/15 Pages) NXP

Part #	PSMN3R7-30YLC

Description	N-channel 30 V 3.95m廓 logic level MOSFET in LFPAK using NextPower technology

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PSMN3R7-30YLC

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Product data sheet

Rev. 01 — 2 May 2011

2 of 15

NXP Semiconductors

PSMN3R7-30YLC

N-channel 30 V 3.95m

Ω logic level MOSFET in LFPAK using NextPower

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

% = placeholder for manufacturing site code

Dynamic characteristics

QGD

gate-drain charge

VGS = 4.5 V; ID =20A;

VDS = 15 V; see Figure 14;

see Figure 15

-4.2

-nC

QG(tot)

total gate charge

VGS = 4.5 V; ID =20A;

VDS = 15 V; see Figure 14;

see Figure 15

-14

-

nC

Table 1.

Quick reference data …continued

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT669 (LFPAK; Power-SO8)

2S

source

3S

source

4

G

gate

mb

D

mounting base; connected to drain

mb

1234

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN3R7-30YLC

LFPAK; Power-SO8

plastic single-ended surface-mounted package; 4 leads

SOT669

Table 4.

Marking codes

Type number

Marking code[1]

PSMN3R7-30YLC

3C730L

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PSMN3R7-30YLC Datasheet(PDF) 2 Page - NXP Semiconductors

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