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MJH11017 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJH11017
Description  15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJH11017 Datasheet(HTML) 2 Page - Motorola, Inc

   
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MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
VCEO(sus)
150
200
250
Vdc
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0)
MJH11017, MJH11018
(VCE = 100 Vdc, IB = 0)
MJH11019, MJH11020
(VCE = 125 Vdc, IB = 0)
MJH11021, MJH11022
ICEO
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
0.5
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)
hFE
400
100
15,000
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)
hFE
400
100
15,000
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)
100
Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA)
Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VCE(sat)
2.5
4.0
Vdc
Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
2.8
Vdc
Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VBE(sat)
3.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
fT
3.0
Output Capacitance
MJH11018, MJH11020, MJH11022
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11017, MJH11019, MJH11021
Cob
400
600
pF
Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
75
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
PNP
Unit
Delay Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
td
150
75
ns
Rise Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
tr
1.2
0.5
µs
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
ts
4.4
2.7
µs
Fall Time
tf
2.5
2.5
µs
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2.0%.
Figure 2. Switching Times Test Circuit
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
V2
APPROX
+12 V
0
V1
APPROX
– 8.0 V
VCC
100 V
TUT
SCOPE
RB
+ 4.0 V
D1
51
RC
25
µs


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