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MJH11017 Datasheet(PDF) 2 Page - Motorola, Inc |
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MJH11017 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 6 page MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 VCEO(sus) 150 200 250 — — — Vdc Collector Cutoff Current (VCE = 75 Vdc, IB = 0) MJH11017, MJH11018 (VCE = 100 Vdc, IB = 0) MJH11019, MJH11020 (VCE = 125 Vdc, IB = 0) MJH11021, MJH11022 ICEO — — — 1.0 1.0 1.0 mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) ICEV — — 0.5 5.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO — 2.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) hFE 400 100 15,000 — — DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) hFE 400 100 15,000 — — DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) 100 — Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VCE(sat) — — 2.5 4.0 Vdc Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) — 2.8 Vdc Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) — 3.8 Vdc DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT 3.0 — — Output Capacitance MJH11018, MJH11020, MJH11022 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021 Cob — — 400 600 pF Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 75 — — SWITCHING CHARACTERISTICS Typical Characteristic Symbol NPN PNP Unit Delay Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) td 150 75 ns Rise Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) tr 1.2 0.5 µs Storage Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) ts 4.4 2.7 µs Fall Time tf 2.5 2.5 µs (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%. Figure 2. Switching Times Test Circuit RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.: 1N5825 used above IB ≈ 100 mA MSD6100 used below IB ≈ 100 mA tr, tf ≤ 10 ns Duty Cycle = 1.0% For td and tr, D1 is disconnected and V2 = 0 For NPN test circuit, reverse diode and voltage polarities. V2 APPROX +12 V 0 V1 APPROX – 8.0 V VCC 100 V TUT SCOPE RB + 4.0 V D1 51 RC 25 µs |
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