MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0)

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

VCEO(sus)

150

200

250

—

—

—

Vdc

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0)

MJH11017, MJH11018

(VCE = 100 Vdc, IB = 0)

MJH11019, MJH11020

(VCE = 125 Vdc, IB = 0)

MJH11021, MJH11022

ICEO

—

—

—

1.0

1.0

1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ICEV

—

—

0.5

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)

hFE

400

100

15,000

—

—

DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)

hFE

400

100

15,000

—

—

100

—

Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA)

VCE(sat)

—

—

2.5

4.0

Vdc

Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

VBE(on)

—

2.8

Vdc

Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

VBE(sat)

—

3.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

fT

3.0

—

—

Output Capacitance

MJH11018, MJH11020, MJH11022

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJH11017, MJH11019, MJH11021

Cob

—

—

400

600

pF

Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

75

—

—

SWITCHING CHARACTERISTICS

Typical

Characteristic

Symbol

NPN

PNP

Unit

Delay Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

td

150

75

ns

Rise Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

tr

1.2

0.5

µs

Storage Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

ts

4.4

2.7

µs

Fall Time

tf

2.5

2.5

µs

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle v 2.0%.

Figure 2. Switching Times Test Circuit

RB & RC varied to obtain desired current levels

D1, must be fast recovery types, e.g.:

1N5825 used above IB ≈ 100 mA

MSD6100 used below IB ≈ 100 mA

tr, tf ≤ 10 ns

Duty Cycle = 1.0%

For td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit, reverse diode and voltage polarities.

V2

APPROX

+12 V

0

V1

APPROX

– 8.0 V

VCC

100 V

TUT

SCOPE

RB

+ 4.0 V

D1

51

RC

25

µs