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AON7400 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON7400 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page AON7400 30V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 26A RDS(ON) (at VGS=10V) < 12.5m Ω RDS(ON) (at VGS = 4.5V) < 14.5m Ω Symbol VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC W TA=70°C 2 Power Dissipation A TA=25°C PDSM 3.1 Power Dissipation B TC=25°C PD 35 W TC=100°C 14 A TA=70°C 9 Continuous Drain Current TA=25°C IDSM 10 A TC=100°C 20 Pulsed Drain Current C 80 Continuous Drain Current TC=25°C ID 26 Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 3.1 75 3.7 Maximum Junction-to-Ambient A The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 30V V ±12 Gate-Source Voltage Drain-Source Voltage 30 °C/W RθJA 30 60 40 °C Thermal Characteristics Units Parameter Typ Max Junction and Storage Temperature Range -55 to 150 G D S DFN 3x3 EP Top View Bottom View Pin 1 Top View 1 2 3 4 8 7 6 5 Rev 3: Mar. 2011 www.aosmd.com Page 1 of 5 |
Similar Part No. - AON7400_11 |
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Similar Description - AON7400_11 |
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