AON7220 datasheet(2/6 Pages) AOSMD

Part #	AON7220

Description	25V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 6 page

AON7220

Symbol

Min

Typ

Max

Units

BVDSS

25

V

VDS=25V, VGS=0V

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

Gate Threshold Voltage

0.7

1.3

1.8

V

ID(ON)

311

A

2.5

3

TJ=125°C

3.5

4.2

3.2

4

gFS

160

S

VSD

0.66

1

V

IS

50

A

Ciss

2368

2961

3554

pF

Coss

686

981

1276

pF

Crss

19

66

113

pF

Rg

0.3

0.67

1.0

Ω

Qg(10V)

34

42.8

52

nC

Qg(4.5V)

12

17.4

23

nC

Qgs

6

nC

Qgd

3.6

nC

tD(on)

7.8

ns

t

2.5

ns

Maximum Body-Diode Continuous Current

G

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=12.5V, ID=20A

Gate Source Charge

Gate Drain Charge

IS=1A,VGS=0V

VDS=5V, ID=20A

VGS=10V, ID=20A

VGS=4.5V, ID=18A

Forward Transconductance

Diode Forward Voltage

On state drain current

Zero Gate Voltage Drain Current

Gate-Body leakage current

m

Ω

RDS(ON)

Static Drain-Source On-Resistance

IDSS

ID=250µA, VGS=0V

VGS=10V, VDS=5V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±12V

Drain-Source Breakdown Voltage

Reverse Transfer Capacitance

VGS=0V, VDS=12.5V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

V

=10V, V =12.5V,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

tr

2.5

ns

tD(off)

37.8

ns

tf

3.8

ns

trr

14

18.1

22

ns

Qrr

31

39.2

47

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Turn-Off DelayTime

IF=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

VGS=10V, VDS=12.5V,

RL=0.625Ω, RGEN=3Ω

Turn-Off Fall Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 0: March 2011

www.aosmd.com

Page 2 of 6

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