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AON6932A Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON6932A Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 10 page  AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 30V 30V ID (at VGS=10V) 28A 42A RDS(ON) (at VGS=10V) <5m Ω <2.5m Ω RDS(ON) (at VGS = 4.5V) <8.5m Ω <3.2m Ω 100% UIS Tested Application 100% Rg Tested Symbol VDS V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS Max Q1 Parameter Gate-Source Voltage Drain-Source Voltage Absolute Maximum Ratings TA=25°C unless otherwise noted Max Q2 Units V V ±20 ±20 30 Top View Bottom View PIN1 DFN5X6 Top View Bottom View Bottom View PIN1 VGS IDM IAS EAS VDS Spike VSPIKE TJ, TSTG Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 t ≤ 10s 29 24 35 29 Steady-State 56 50 67 60 Steady-State RθJC 3.3 1.2 4 1.6 V 100ns Avalanche Energy L=0.05mH C 36 36 TC=25°C °C/W °C/W Maximum Junction-to-Ambient A D RθJA Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Case TC=100°C Power Dissipation A PDSM TA=25°C TA=25°C Power Dissipation B IDSM TA=70°C PD 31 TC=100°C Pulsed Drain Current C Continuous Drain Current G ID 32 17 TC=25°C 12 Gate-Source Voltage mJ Avalanche Current C Continuous Drain Current A Units 70 26 123 A 31 V 33 ±20 ±20 A 168 36 28 42 22 112 °C W 22 29 78 Thermal Characteristics 3.6 4.3 2.3 2.7 Junction and Storage Temperature Range -55 to 150 W TA=70°C Rev 0 : Nov. 2012 www.aosmd.com Page 1 of 10 |
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