AON6906A datasheet(2/10 Pages) AOSMD

Part #	AON6906A

Description	30V Dual Asymmetric N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

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2 / 10 page

AON6906A

Symbol

Min

Typ

Max

Units

BVDSS

30

V

VDS=30V, VGS=0V

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

Gate Threshold Voltage

1.3

1.8

2.4

V

ID(ON)

85

A

12

14.4

TJ=125°C

17.5

21

17

21.3

m

Ω

gFS

30

S

VSD

0.73

1

V

IS

33

A

Ciss

400

510

670

pF

Coss

150

220

310

pF

Crss

13

22

38

pF

Rg

0.9

1.8

2.7

Ω

Qg(10V)

5.9

7.4

9

nC

Qg(4.5V)

2.6

3.3

4.0

nC

Qgs

1.2

1.5

1.8

nC

Qgd

0.8

1.4

2

nC

tD(on)

4.3

ns

tr

8ns

tD(off)

15.8

ns

tf

3.4

ns

trr

7.2

911

ns

Qrr

11.8

14.7

17.7

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

m

Ω

VGS=4.5V, ID=9.1A

IDSS

Zero Gate Voltage Drain Current

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=9.1A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Forward Transconductance

VDS=5V, ID=9.1A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=15V, ID=9.1A

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=500A/µs

Turn-On DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=9.1A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the

user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by package.

H. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 0: Oct 2010

www.aosmd.com

Page 2 of 10

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