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AON6780 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6780
Description  30V N-Channel MOSFET
Download  7 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6780 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6780
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 1.7m
Ω
RDS(ON) (at VGS = 4.5V)
< 2.2m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1.1
50
1.5
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
83
1.6
TA=25°C
A
TA=25°C
IDSM
A
TA=70°C
ID
85
67
TC=25°C
TC=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
24
Continuous Drain
Current
231
30
A
68
SRFET
TM AON6780 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
V
±12
Gate-Source Voltage
Drain-Source Voltage
30
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Maximum Junction-to-Ambient
A
°C/W
RθJA
15
42
20
320
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
2.5
33
TC=100°C
SRFET TM
G
D
S
SRFET
TM
S
oft Recovery MOSFET:
Integrated Schottky Diode
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
Rev0 : Oct 2010
www.aosmd.com
Page 1 of 7


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