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AON6435 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6435
Description  30V P-Channel MOSFET
Download  7 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6435 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6435
30V P-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS= -10V)
-34A
RDS(ON) (at VGS= -10V)
< 17m
Ω
RDS(ON) (at VGS =-5V)
< 34m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
The AON6435 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
-30V
Drain-Source Voltage
-30
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
VDS
VGS
IDM
IAS
EAS
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
3.4
64
4
TC=25°C
TC=100°C
W
Power Dissipation
A
PDSM
W
TA=70°C
31
2.6
TA=25°C
Power Dissipation
B
PD
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
-10
V
°C
IDSM
A
TA=70°C
Continuous Drain
Current
29
-12
A
24
V
±25
Gate-Source Voltage
Drain-Source Voltage
-30
°C/W
RθJA
24
53
-95
30
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
A
TA=25°C
Pulsed Drain Current
C
Continuous Drain
Current
ID
-34
-21.5
Parameter
Typ
Max
TC=25°C
4.1
12.5
TC=100°C
Junction and Storage Temperature Range
-55 to 150
Rev 0: Sep 2011
www.aosmd.com
Page 1 of 7


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