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NCP1253 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NCP1253
Description  Current-Mode PWM Current-Mode PWM Power Supplies
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP1253 Datasheet(HTML) 4 Page - ON Semiconductor

 
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NCP1253
http://onsemi.com
4
MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
VCC
Power Supply voltage, Vcc pin, continuous voltage
28
V
Maximum voltage on low power pins CS, and FB
−0.3 to 10
V
RqJ−A
Thermal Resistance Junction−to−Air
360
°C/W
TJ,max
Maximum Junction Temperature
150
°C
Storage Temperature Range
−60 to +150
°C
ESD Capability, Human Body Model, all pins
2
kV
ESD Capability, Machine Model
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per Mil−Std−883, Method 3015.
Machine Model Method 200 V.
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS
(For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V unless otherwise noted)
Symbol
Rating
Pin
Min
Typ
Max
Unit
VCCON
VCC increasing level at which driving pulses are authorized
5
16
18
20
V
VCC(min)
VCC decreasing level at which driving pulses are stopped
5
8.2
8.8
9.4
V
VCCHYST
Hysteresis VCCON−VCC(min)
5
6
V
VZENER
Clamped VCC when latched off @ ICC = 500 mA
5
7
V
ICC1
Start−up current
5
15
mA
ICC2
Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 0
5
1.4
2.2
mA
ICC3
Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 1 nF
5
2.1
3.0
mA
ICC2
Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 0
5
1.7
2.5
mA
ICC3
Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 1 nF
5
3.1
4.0
mA
ICCstby
Internal IC consumption while in skip mode (VCC = 12 V, driving a typical
6 A/600 V MOSFET)
5
550
mA
ICCLATCH
Current flowing into VCC pin that keeps the controller latched –
TJ = 0 to 125°C
5
32
mA
ICCLATCH
Current flowing into VCC pin that keeps the controller latched –
TJ = −40°C to 125°C
5
40
mA
DRIVE OUTPUT
Tr
Output voltage rise−time @ CL = 1 nF, 10−90% of output signal
6
40
ns
Tf
Output voltage fall−time @ CL = 1 nF, 10−90% of output signal
6
30
ns
ROH
Source resistance
6
13
W
ROL
Sink resistance
6
6
W
Isource
Peak source current, VGS = 0 V (Note 3)
6
300
mA
Isink
Peak sink current, VGS = 12 V (Note 3)
6
500
mA
VDRVlow
DRV pin level at VCC close to VCC(min) with a 33 kW resistor to GND
6
8
V
VDRVhigh
DRV pin level at VCC= 28 V – DRV unloaded
6
10
12
14
V
3. Guaranteed by design
CURRENT COMPARATOR
IIB
Input Bias Current @ 0.8 V input level on pin 4
4
0.02
mA
VLimit1
Maximum internal current setpoint – TJ = 25 °C
4
0.744
0.8
0.856
V
VLimit2
Maximum internal current setpoint – TJ = −40° to 125 °C
4
0.72
0.8
0.88
V


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