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STM32F405OE Datasheet(PDF) 100 Page - STMicroelectronics |
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STM32F405OE Datasheet(HTML) 100 Page - STMicroelectronics |
100 / 180 page Electrical characteristics STM32F405xx, STM32F407xx 100/180 Doc ID 022152 Rev 3 Table 38. Flash memory programming Symbol Parameter Conditions Min(1) Typ Max(1) 1. Based on characterization, not tested in production. Unit tprog Word programming time Program/erase parallelism (PSIZE) = x 8/16/32 -16 100(2) 2. The maximum programming time is measured after 100K erase operations. µs tERASE16KB Sector (16 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 400 800 ms Program/erase parallelism (PSIZE) = x 16 - 300 600 Program/erase parallelism (PSIZE) = x 32 - 250 500 tERASE64KB Sector (64 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 1200 2400 ms Program/erase parallelism (PSIZE) = x 16 - 700 1400 Program/erase parallelism (PSIZE) = x 32 - 550 1100 tERASE128KB Sector (128 KB) erase time Program/erase parallelism (PSIZE) = x 8 -2 4 s Program/erase parallelism (PSIZE) = x 16 -1.3 2.6 Program/erase parallelism (PSIZE) = x 32 -1 2 tME Mass erase time Program/erase parallelism (PSIZE) = x 8 -16 32 s Program/erase parallelism (PSIZE) = x 16 -11 22 Program/erase parallelism (PSIZE) = x 32 -8 16 Vprog Programming voltage 32-bit program operation 2.7 - 3.6 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.8 - 3.6 V Table 39. Flash memory programming with VPP Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Double word programming TA = 0 to +40 °C VDD = 3.3 V VPP = 8.5 V - 16 100(2) µs tERASE16KB Sector (16 KB) erase time - 230 - ms tERASE64KB Sector (64 KB) erase time - 490 - tERASE128KB Sector (128 KB) erase time - 875 - tME Mass erase time - 6.9 - s Vprog Programming voltage 2.7 - 3.6 V |
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