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SFF12N60 Datasheet(PDF) 1 Page - SemiWell Semiconductor |
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SFF12N60 Datasheet(HTML) 1 Page - SemiWell Semiconductor |
1 / 3 page SFF12N60 Copyright@SemiWell Semiconductor Ltd., All rights are reserved SemiWell Semiconductor Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol Parameter Ratings Units VDSS Drain-Source Voltage 600 V ID Drain Current TC=25℃ TC=100℃ 12 7.4 A VGSS Gate-Source Voltage ± 30 V IDM Drain Current pulse (Note 1) 88 A EAS Single Pulse Avalanche Energy (Note 2) 865 mJ EAR Repetitive Avalanche Energy (Note 1) 23.1 mJ dv/dt Peak diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TC=25℃ 54 W Tj, TSTG Operation and Storage Temperature range -45 ~ 150 ℃ N-Channel MOSFET Features ◆ RDS(ON) Max 0.65 ohm at VGS = 10V ◆ Gate Charge ( Typical 52 nC) ◆ Improve dv/dt capability, Fast switching ◆ 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have a high rugged avalanche characteristics. These device are well suited for high efficiency switch mode power supply active power factor correction. Electronic lamp based on half bridge topology |
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