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DCR470E32 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR470E32 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 9 page SEMICONDUCTOR DCR470E34 6/9 www.dynexsemi.com Fig.8 Multi-cycle surge current Fig.9 Single-cycle I 2t Fig.10 Gate characteristics 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 1 10 100 Number of cycles Conditons: Tcase=125°C VR=0 Pulse width = 10ms 0.00 0.05 0.10 0.15 0.20 0.25 1 10 Pulse width, tp - (ms) Conditons: Tcase=125°C VR=0 half-sine wave 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 0 50 100 150 200 250 300 350 400 450 500 Gate trigger current IGT, - (mA) Tj=25°C Tj=125°C Upper limit Tj=-40°C Lower limit |
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