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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching applications.

• DC Current Gain Specified to 10 Amperes

• High Current Gain — Bandwidth Product —

fT = 2.0 MHz (Min) @ IC = 500 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

60

Vdc

Collector–Base Voltage

VCB

70

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

MJE3055T, MJE2955T

PD†

75

0.6

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

1.67

_C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

10

5.0

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.2

0.1

20

30

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C (D = 0.1)

dc

7.0

10

5.0 ms

1.0 ms

50 60

0.5

7.0

3.0

0.7

0.3

TJ = 150°C

100

µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150_C. TC is vari-

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided TJ(pk) v 150_C.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE2955T/D

MJE2955T

MJE3055T

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 VOLTS

75 WATTS

*Motorola Preferred Device

*

PNP

NPN

*

CASE 221A–06

TO–220AB

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