2

RF Device Data

Freescale Semiconductor

MRF6V2150NR1 MRF6V2150NBR1

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

2.5

mA

Zero Gate Voltage Drain Leakage Current

—

—

50

μAdc

Drain--Source Breakdown Voltage

110

—

—

Vdc

Gate--Source Leakage Current

—

—

10

μAdc

On Characteristics

Gate Threshold Voltage

1

1.62

3

Vdc

Gate Quiescent Voltage

1.5

2.6

3.5

Vdc

Drain--Source On--Voltage

—

0.26

—

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

—

1.6

—

pF

Output Capacitance

—

93

—

pF

Input Capacitance

—

163

—

pF

Power Gain

23.5

25

26.5

dB

Drain Efficiency

66

68.3

—

%

Input Return Loss

IRL

—

--17

--9

dB

Power Gain

f = 27 MHz

f = 450 MHz

—

—

32.3

22.9

—

—

dB

Drain Efficiency

f = 27 MHz

f = 450 MHz

—

—

78.7

57.6

—

—

%

Input Return Loss

f = 27 MHz

f = 450 MHz

IRL

—

—

--10.6

--17.6

—

—

dB

ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.