MJE18204 MJF18204

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Voltage

(IC = 1 mA, IB = 0)

VCEO

600

660

Vdc

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

(IC = 200 mA, L = 25 mH, R = 2 Ω)

VCEO(sus)

VCER(sus)

550

600

630

700

Vdc

Collector–Base Breakdown Voltage

(ICBO = 1 mA, IE = 0)

VCBO

1200

1300

Vdc

Emitter–Base Breakdown Voltage

(IEBO = 1 mA, IC = 0)

VEBO

10

12.9

Vdc

Collector Cutoff Current (VCE = 600 V, IB = 0)

@ TC = 25°C

@ TC = 125°C

ICEO

200

2000

µAdc

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

@ TC = 25°C

@ TC = 125°C

@ TC = 125°C

ICES

100

500

100

µAdc

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ICBO

100

µAdc

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.1 Adc)

(IC = 2 Adc, IB = 0.4 Adc)

VBE(sat)

0.83

0.92

1.1

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.1 Adc)

@ TC = 25°C

@ TC = 125°C

VCE(sat)

0.3

0.7

1

1.25

Vdc

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

@ TC = 125°C

0.3

0.8

0.6

1.25

DC Current Gain

(IC = 0.5 Adc, VCE = 3 Vdc)

@ TC = 25°C

@ TC = 125°C

hFE

18

23

35

—

(IC = 1 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

10

8

13

22

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

5

4

8

6

—

(IC = 5 mAdc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

10

25

33

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

13

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

200

pF

Input Capacitance (VEB = 8 Vdc)

Cib

2000

pF

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 2 Adc

IB1 = 660 mAdc

VCC = 300 V

@ 3

µs

@ TC = 25°C

VCE(dsat)

2.5

V

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IB1 = 660 mAdc

VCC = 300 V

@ TC = 125°C

7.5

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 2 Adc

IB1 = 0.4 Adc

VCC = 300 V

@ 3

µs

@ TC = 25°C

7

rising IB1 reaches

90% of final IB1

IB1 = 0.4 Adc

VCC = 300 V

@ TC = 125°C

15