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AO6422 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO6422 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AO6422 Symbol Min Typ Max Units BVDSS 20 V 1 TJ = 55°C 5 IGSS ±100 nA VGS(th) 0.4 0.65 1 V ID(ON) 30 A 35 44 TJ=125°C 48 60 43 55 m Ω 55 72 m Ω gFS 14 S VSD 0.8 1 V IS 2 A Ciss 450 560 pF Coss 74 pF Crss 52 pF Rg 4.9 7.5 Ω Qg (4.5V) 6.2 8.2 nC Qgs 0.4 nC Qgd 1.3 nC tD(on) 4.5 ns Drain-Source Breakdown Voltage On state drain current ID = 250µA, VGS = 0V VGS = 4.5V, VDS = 5V VGS = 4.5V, ID = 5.0A Reverse Transfer Capacitance Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS = VGS ID = 250µA VDS = 20V, VGS = 0V VDS = 0V, VGS = ±8V m Ω IS = 1A,VGS = 0V VDS = 5V, ID = 5.0A VGS = 2.5V, ID = 4.5A VGS = 1.8V, ID = 3.5A Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge VGS= 4.5V, VDS= 10V, ID= 5A DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=10V, f=1MHz Input Capacitance Output Capacitance Alpha & Omega Semiconductor, Ltd. www.aosmd.com tD(on) 4.5 ns tr 6 ns tD(off) 33 ns tf 7.1 ns trr 13 17 ns Qrr 3.3 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime VGS=4.5V, VDS=10V, RL=2Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Feb. 2012 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AO6422_12 |
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Similar Description - AO6422_12 |
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