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IDW30G65C5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IDW30G65C5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 11 page 5 th Generation thinQ!TM SiC Schottky Diode IDW30G65C5 Electrical characteristics diagrams Final Data Sheet 6 Rev. 2.2, 2013-01-15 5 Electrical characteristics diagrams Table 7 Power dissipation Diode forward current 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175 T C[°C] 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 175 T C[°C] 0.1 0.3 0.5 0.7 1 Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Table 8 Typical forward characteristics Typical forward characteristics in surge current 0 10 20 30 40 50 60 01 23 V F [V] 0 50 100 150 200 250 300 0123 456 VF [V] IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj -55°C 175°C 150°C 25°C 100°C -55°C 25°C 100°C 150°C 175°C |
Similar Part No. - IDW30G65C5_12 |
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Similar Description - IDW30G65C5_12 |
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