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IDW30G65C5 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IDW30G65C5
Description  ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDW30G65C5 Datasheet(HTML) 6 Page - Infineon Technologies AG

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5
th Generation thinQ!TM SiC Schottky Diode
IDW30G65C5
Electrical characteristics diagrams
Final Data Sheet
6
Rev. 2.2, 2013-01-15
5
Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
175
T
C[°C]
0
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
150
175
T
C[°C]
0.1
0.3
0.5
0.7
1
Ptot=f(TC); RthJC,max
IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle
Table 8
Typical forward characteristics
Typical forward characteristics in surge current
0
10
20
30
40
50
60
01
23
V
F [V]
0
50
100
150
200
250
300
0123
456
VF [V]
IF=f(VF); tp=200 µs; parameter: Tj
IF=f(VF); tp=200 µs; parameter: Tj
-55°C
175°C
150°C
25°C
100°C
-55°C
25°C
100°C
150°C
175°C


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