AO4924

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

DYNAMIC PARAMETERS

0

2

4

6

8

10

0

5

10

15

20

25

Figure 7: Gate-Charge Characteristics

0

500

1000

1500

2000

2500

0

5

10

15

20

25

30

Figure 8: Capacitance Characteristics

0.01

0.10

1.00

10.00

100.00

0.01

0.1

1

10

100

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

µs

10s

1ms

DC

limited

100

µ

0.001

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Single Pulse

0

10

20

30

40

50

0.0001

0.001

0.01

0.1

1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

1s

Alpha & Omega Semiconductor, Ltd.