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AO4498E Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AO4498E
Description  30V N-Channel MOSFET
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4498E Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AO4498E
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
18A
RDS(ON) (at VGS=10V)
< 5.8m
RDS(ON) (at VGS = 4.5V)
< 8.5m
ESD Protected
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJL
2
TA=70°C
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Units
Parameter
Typ
Max
°C/W
RθJA
31
59
40
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
The AO4498E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
A
ID
18
14
120
TA=25°C
TA=70°C
Power Dissipation
B
PD
Pulsed Drain Current
C
Continuous Drain
Current
TA=25°C
W
3.1
Maximum Junction-to-Lead
°C/W
°C/W
Maximum Junction-to-Ambient
A D
16
75
24
Maximum Junction-to-Ambient
A
G
D
S
SOIC-8
Top View
Bottom View
D
D
D
D
S
S
S
G
Rev 1: November 2009
www.aosmd.com
Page 1 of 5


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