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AO4486 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part No. AO4486
Description  100V N-Channel MOSFET
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Maker  AOSMD [Alpha & Omega Semiconductors]
Homepage  http://www.aosmd.com
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 2 page
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AO4486
Symbol
Min
Typ
Max
Units
BVDSS
100
V
VDS=100V, VGS=0V
1
TJ=55°C
5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
1.6
2.2
2.7
V
ID(ON)
31
A
62.5
79
TJ=125°C
121
151
68.5
90
m
gFS
20
S
VSD
0.74
1
V
IS
3.5
A
Ciss
620
778
942
pF
Coss
38
55
81
pF
Crss
13
24
35
pF
Rg
0.7
1.45
2.2
Qg(10V)
13
16.3
20
nC
Qg(4.5V)
6.4
8.1
10
nC
Qgs
2.2
2.8
3.4
nC
Qgd
2.4
4.1
5.8
nC
tD(on)
6
ns
t
2.5
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=10V, V =50V, R =16.7
Ω,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=50V, ID=3.0A
Gate Source Charge
RDS(ON)
Static Drain-Source On-Resistance
m
IS=1A,VGS=0V
VDS=5V, ID=3A
VGS=4.5V, ID=3A
Diode Forward Voltage
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=3A
Reverse Transfer Capacitance
VGS=0V, VDS=50V, f=1MHz
SWITCHING PARAMETERS
VDS=VGS ID=250µA
VDS=0V, VGS= ±20V
Gate-Body leakage current
Forward Transconductance
Gate Drain Charge
Total Gate Charge
tr
2.5
ns
tD(off)
21
ns
tf
2.4
ns
trr
14
21
28
ns
Qrr
65
94
123
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=16.7Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=3A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Sep 2010
www.aosmd.com
Page 2 of 6




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