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AO4478 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AO4478
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4478 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

  AO4478_10 Datasheet HTML 1Page - Alpha & Omega Semiconductors AO4478_10 Datasheet HTML 2Page - Alpha & Omega Semiconductors AO4478_10 Datasheet HTML 3Page - Alpha & Omega Semiconductors AO4478_10 Datasheet HTML 4Page - Alpha & Omega Semiconductors AO4478_10 Datasheet HTML 5Page - Alpha & Omega Semiconductors AO4478_10 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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background image
Symbol
VDS
VGS
IDM
Iar
Ear
TJ, TSTG
Symbol
Typ
Max
31
40
59
75
RθJL
16
24
Avalanche Current
C
17
A
Repetitive avalanche energy L=0.1mH
C
14
mJ
Pulsed Drain Current
C
60
TA=70°C
7.0
Continuous Drain
Current
TA=25°C
ID
9.0
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
30
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
±25
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
AD
Steady-State
Maximum
Units
Parameter
Junction and Storage Temperature Range
°C
-55 to 150
3.1
W
TA=70°C
2.0
Power Dissipation
B
TA=25°C
PD
AO4478
30V N-Channel MOSFET
Product Summary
VDS (V) = 30V
ID = 9A (VGS = 10V)
RDS(ON) <19mΩ (VGS = 10V)
RDS(ON) <26mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4478 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. This
device is suitable for use as general puspose, PWM and
a load switch applications.
G
D
S
SOIC-8
Top View
Bottom View
D
D
D
D
S
S
S
G
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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