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MJE15028 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MJE15028
Description  8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJE15028 Datasheet(HTML) 3 Page - Motorola, Inc

   
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MJE15028 MJE15030 MJE15029 MJE15031
3
Motorola Bipolar Power Transistor Device Data
20
2.0
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
10
0.02
20
120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
dc
100
µs
5.0
10
150
1.0
50
0.1
5 ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
0
Figure 4. Reverse–Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
0
120
140
5 V
VBE(off) = 9 V
100
110
150
3.0
130
2.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
100
30
10
7.0
5.0
1.5
3.0
20
50
Figure 6. Small–Signal Current Gain
f, FREQUENCY (MHz)
1.0
3.0
10
20
100
2.0
7.0
5.0
0.5
5.0
50
30
10
0.7
NPN
Figure 7. Current Gain–Bandwidth Product
IC, COLLECTOR CURRENT (AMP)
0.5
2.0
60
100
1.0
10
20
0.1
5.0
90
50
0.2
IC/IB = 10
TC = 25°C
3 V
1.5 V
PNP
(NPN)
(PNP)
VCE = 10 V
IC = 0.5 A
TC = 25°C
Cib (NPN)
Cob (PNP)
100
30
0
10
0 V
Cib (PNP)
Cob (NPN)


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