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DTU40N03 Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd |
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DTU40N03 Datasheet(HTML) 4 Page - DinTek Semiconductor Co,.Ltd |
4 / 9 page 4 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012 345 67 8 910 TJ = 25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms 100 ms 1s 10 s 100 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified D www. daysemi.jp |
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