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DTS2301 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd |
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DTS2301 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd |
2 / 7 page Preliminary DINDS0290EJ0400 Rev.4.00 Page 2 of 6 Mar 28, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 V(BR)GSS +8 — — V IG = +100 A, VDS = 0 Gate to source breakdown voltage V(BR)GSS –12 — — V IG = –100 A, VDS = 0 IGSS — — +10 A VGS = +6 V, VDS = 0 Gate to source leak current IGSS — — –10 A VGS = –10 V, VDS = 0 Drain to source leak current IDSS — — –1 A VDS = –20 V, VGS = 0 Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA RDS(on) — 68 98 m ID = –1.8 A, VGS = –4.5 VNote3 Drain to source on state resistance RDS(on) — 95 115 m ID = –1.8 A, VGS = –2.5 VNote3 Forward transfer admittance |yfs| 4.5 6.5 — S ID = –1.8 A, VDS = –10 VNote3 Input capacitance Ciss — 597 — pF Output capacitance Coss — 149 — pF Reverse transfer capacitance Crss — 93 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn - on delay time td(on) — 18 — ns Rise time tr — 43 — ns Turn - off delay time td(off) — 37 — ns Fall time tf — 12 — ns ID = –1.8 A VGS = –4.5 V RL = 5.5 Rg = 4.7 Total gate charge Qg — 6.3 — nC Gate to source charge Qgs — 1.1 — nC Gate to drain charge Qgd — 2.5 — nC VDD = –10 V VGS = –4.5 V ID = –3.8 A Body - drain diode forward voltage VDF — –0.85 –1.1 V IF = –3.8 A, VGS = 0 Note3 Notes: 3. Pulse test |
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