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DTU4N60 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd |
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DTU4N60 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd |
2 / 8 page 2 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.7 Ab -- 1.2 Forward Transconductance gfs VDS = 100 V, ID = 3.7 Ab 3.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 - 1100 - pF Output Capacitance Coss - 140 - Reverse Transfer Capacitance Crss -15 - Total Gate Charge Qg VGS = 10 V ID = 4 A, V DS = 360 V, see fig. 6 and 13b -- 39 nC Gate-Source Charge Qgs -- 10 Gate-Drain Charge Qgd -- 19 Turn-On Delay Time td(on) VDD = 300 V, ID = 4 A Rg = 9.1 , RD = 47, see fig. 10b -12 - ns Rise Time tr -20 - Turn-Off Delay Time td(off) -27 - Fall Time tf -17 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 4.0 A Pulsed Diode Forward Currenta ISM -- 25 Body Diode Voltage VSD TJ = 25 °C, IS = 4 A, V GS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4 A, dI/dt = 100 A/μs b - 440 680 ns Body Diode Reverse Recovery Charge Qrr -2.1 3.2 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G D www. daysemi.jp |
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