DTU4N60 datasheet(2/8 Pages) DINTEK

Part #	DTU4N60

Description	Reduced Gate Drive Requirement

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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2

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

-

Maximum Junction-to-Case (Drain)

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

-

V

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

-

0.70

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = 20

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

-

100

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

-

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 3.7 Ab

--

1.2



Forward Transconductance

gfs

VDS = 100 V, ID = 3.7 Ab

3.7

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V

f = 1.0 MHz, see fig. 5

-

1100

-

pF

Output Capacitance

Coss

-

140

-

Reverse Transfer Capacitance

Crss

-15

-

Total Gate Charge

Qg

VGS = 10 V

ID = 4 A, V DS = 360 V,

see fig. 6 and 13b

--

39

nC

Gate-Source Charge

Qgs

--

10

Gate-Drain Charge

Qgd

--

19

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 4 A

Rg = 9.1 , RD = 47, see fig. 10b

-12

-

ns

Rise Time

tr

-20

-

Turn-Off Delay Time

td(off)

-27

-

Fall Time

tf

-17

-

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

4.0

A

Pulsed Diode Forward Currenta

ISM

--

25

Body Diode Voltage

VSD

TJ = 25 °C, IS = 4 A, V GS = 0 Vb

--

1.5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 4 A, dI/dt = 100 A/μs b

-

440

680

ns

Body Diode Reverse Recovery Charge

Qrr

-2.1

3.2

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

D

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