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DTL9826 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd |
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DTL9826 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd |
2 / 7 page 2 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A 0.023 0.030 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 0.063 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.084 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 5100 pF Output Capacitance Coss 480 Reverse Transfer Capacitance Crss 210 Total Gate Chargec Qg VDS = 100 V, VGS = 10 V, ID = 65 A 90 130 nC Gate-Source Chargec Qgs 23 Gate-Drain Chargec Qgd 34 Gate Resistance Rg 0.5 1.7 3.3 Ω Turn-On Delay Timec td(on) VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω 24 35 ns Rise Timec tr 220 330 Turn-Off Delay Timec td(off) 45 70 Fall Timec tf 200 300 Source-Drain Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 65 A Pulsed Current ISM 140 Forward Voltagea VSD IF = 65 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/µs 130 200 ns Peak Reverse Recovery Current IRM(REC) 812 A Reverse Recovery Charge Qrr 0.52 1.2 µC DT www. daysemi.jp |
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