DTL9826 datasheet(2/7 Pages) DINTEK

Part #	DTL9826

Description	N-Channel 100-V (D-S) MOSFET

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VDS = 0 V, ID = 250 µA

100

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

24

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

µA

VDS = 100 V, VGS = 0 V, TJ = 125 °C

50

VDS = 100 V, VGS = 0 V, TJ = 175 °C

250

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

120

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 30 A

0.023

0.030

Ω

VGS = 10 V, ID = 30 A, TJ = 125 °C

0.063

VGS = 10 V, ID = 30 A, TJ = 175 °C

0.084

Forward Transconductancea

gfs

VDS = 15 V, ID = 30 A

25

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

5100

pF

Output Capacitance

Coss

480

Reverse Transfer Capacitance

Crss

210

Total Gate Chargec

Qg

VDS = 100 V, VGS = 10 V, ID = 65 A

90

130

nC

Gate-Source Chargec

Qgs

23

Gate-Drain Chargec

Qgd

34

Gate Resistance

Rg

0.5

1.7

3.3

Ω

Turn-On Delay Timec

td(on)

VDD = 100 V, RL = 1.5 Ω

ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω

24

35

ns

Rise Timec

tr

220

330

Turn-Off Delay Timec

td(off)

45

70

Fall Timec

tf

200

300

Source-Drain Diode Ratings and Characteristics TC = 25 °C

b

Continuous Current

IS

65

A

Pulsed Current

ISM

140

Forward Voltagea

VSD

IF = 65 A, VGS = 0 V

1.0

1.5

V

Reverse Recovery Time

trr

IF = 50 A, di/dt = 100 A/µs

130

200

ns

Peak Reverse Recovery Current

IRM(REC)

812

A

Reverse Recovery Charge

Qrr

0.52

1.2

µC

DT

www.

daysemi.jp

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