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AO4443 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4443 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO4443 Symbol Min Typ Max Units BVDSS -40 V VDS=-40V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -1.5 -2 -2.6 V ID(ON) 40 A 35 42 TJ=125°C 53 65 46.5 63 m Ω gFS 17 S VSD -0.76 -1 V IS -3.5 A Ciss 750 940 1175 pF Coss 97 pF Crss 72 pF Rg 7 14 21 Ω Qg(10V) 17.3 22 nC Qg(4.5V) 8.4 11 Qgs 3.2 nC Qgd 4.3 nC tD(on) 10.3 ns t 4.3 ns VGS=0V, VDS=-20V, f=1MHz SWITCHING PARAMETERS VDS=VGS ID=-250µA VGS=-4.5V, ID=-5A Forward Transconductance VGS=-10V, ID=-6A Reverse Transfer Capacitance Maximum Body-Diode Continuous Current m Ω V =-10V, V =-20V, DYNAMIC PARAMETERS Turn-On DelayTime Gate resistance VGS=0V, VDS=0V, f=1MHz VDS=-5V, ID=-6A RDS(ON) Static Drain-Source On-Resistance Total Gate Charge VGS=-10V, VDS=-20V, ID=-6A Gate Source Charge Gate Drain Charge IS=-1A,VGS=0V Diode Forward Voltage Input Capacitance Output Capacitance Turn-On Rise Time Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VDS=0V, VGS=±20V Gate-Body leakage current tr 4.3 ns tD(off) 39 ns tf 46.5 ns trr 17 24 ns Qrr 11.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=-6A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs VGS=-10V, VDS=-20V, RL=3.35Ω, RGEN=3Ω Turn-Off DelayTime Turn-Off Fall Time Turn-On Rise Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 4: August 2011 www.aosmd.com Page 2 of 5 |
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