MJD44E3 datasheet(2/4 Pages) MOTOROLA

Part #	MJD44E3

Description	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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2 / 4 page

MJD44E3

2

Motorola Bipolar Power Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ICES

—

10

µA

Emitter Cutoff Current

(VEB = 7 Vdc)

IEBO

—

1

µA

ON CHARACTERISTICS

Collector–Emitter Saturation Voltage

(IC = 5 Adc, IB = 10 mAdc)

(IC = 10 Adc, IB = 20 mAdc)

VCE(sat)

—

1.5

2

Vdc

Base–Emitter Saturation Voltage

(IC = 5 Adc, IB = 10 mAdc)

VBE(sat)

—

2.5

Vdc

DC Current Gain

(VCE = 5 Vdc, IC = 5 Adc)

hFE

1000

—

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz)

Ccb

—

130

pF

SWITCHING TIMES

Delay and Rise Times

(IC = 10 Adc, IB1 = 20 mAdc)

td + tr

—

0.6

—

µs

Storage Time

(IC = 10 Adc, IB1 = IB2 = 20 mAdc)

ts

—

2

—

µs

Fall Time

(IC = 10 Adc, IB1 = IB2 = 20 mAdc)

tf

—

0.5

—

µs

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

3

5

10

20

100

5

2

1

0.2

0.1

0.5

50

230

1

Figure 1. Maximum Forward Bias

Safe Operating Area

Figure 2. Power Derating

TC

TA

SURFACE

MOUNT

TC = 25°C SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

25

T, TEMPERATURE (

°C)

0

50

75

100

125

150

20

15

10

5

2.5

0

2

1.5

1

0.5

TA TC

0.3

3

100

µs

1 ms

5 ms

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