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AOB10B60D Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB10B60D Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  AOB10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary VCE IC (TC=100°C) 10A VCE(sat) (TC=25°C) 1.53V Symbol V The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft co- package diode is targeted for minimal losses in motor control applications. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOB10B60D 600V Collector-Emitter Voltage 600 G C E Top View AOB10B60D TO-263 D2PAK C E G V CE V GE I CM I LM Diode Pulsed Current, Limited by TJmax I FM t SC T J , T STG T L Symbol R θ JA R θ JC R θ JC °C/W 1.7 Maximum Diode Junction-to-Case °C/W 0.92 Maximum IGBT Junction-to-Case V Collector-Emitter Voltage 600 Maximum Junction-to-Ambient 10 µs TC=100°C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds °C Power Dissipation P D Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=150°C Junction and Storage Temperature Range TC=25°C Thermal Characteristics 300 -55 to 150 163 40 °C/W 65 82 °C 40 AOB10B60D Pulsed Collector Current, Limited by TJmax Gate-Emitter Voltage TC=100°C W Units A A Parameter ±20 V 40 A A Continuous Diode Forward Current TC=25°C I F 20 A TC=100°C Continuous Collector Current TC=25°C 10 20 10 I C Turn off SOA, VCE ≤ 600V, Limited by TJmax G C E Top View AOB10B60D TO-263 D2PAK C E G Rev0: July 2012 www.aosmd.com Page 1 of 9 |
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