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DS28EL15Q+T Datasheet(PDF) 2 Page - Maxim Integrated Products |
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DS28EL15Q+T Datasheet(HTML) 2 Page - Maxim Integrated Products |
2 / 6 page DS28EL15 DeepCover Secure Authenticator with 1-Wire SHA-256 and 512-Bit User EEPROM 2 Maxim Integrated IO Voltage Range to GND....................................-0.5V to +4.0V IO Sink Current...................................................................20mA Operating Temperature Range.......................... -40NC to +85NC Junction Temperature .....................................................+150NC Storage Temperature Range............................ -55NC to +125NC Lead Temperature (soldering, 10s) ................................+300NC Soldering Temperature (reflow) ......................................+260NC ABSOLUTE MAXIMUM RATINGS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = -40NC to +85NC, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS IO PIN: GENERAL DATA 1-Wire Pullup Voltage VPUP (Note 2) 1.71 1.89 V 1-Wire Pullup Resistance RPUP VPUP = 1.8V Q5% (Note 3) 300 750 I Input Capacitance CIO (Notes 4, 5) 1500 pF Input Load Current IL IO pin at VPUP 5 19.5 F A High-to-Low Switching Threshold VTL (Notes 6, 7) 0.65 x VPUP V Input Low Voltage VIL (Notes 2, 8) 0.3 V Low-to-High Switching Threshold VTH (Notes 6, 9) 0.75 x VPUP V Switching Hysteresis VHY (Notes 6, 10) 0.3 V Output Low Voltage VOL IOL = 4mA (Note 11) 0.4 V Recovery Time tREC RPUP = 750I (Notes 2, 12) 5 F s Time Slot Duration tSLOT (Notes 2, 13) 13 F s IO PIN: 1-Wire RESET, PRESENCE-DETECT CYCLE Reset Low Time tRSTL (Note 2) 48 80 F s Reset High Time tRSTH (Note 14) 48 F s Presence-Detect Sample Time tMSP (Notes 2, 15) 8 10 F s IO PIN: 1-Wire WRITE Write-Zero Low Time tW0L (Notes 2, 16) 8 16 F s Write-One Low Time tW1L (Notes 2, 16) 1 2 F s IO PIN: 1-Wire READ Read Low Time tRL (Notes 2, 17) 1 2 - d F s Read Sample Time tMSR (Notes 2, 17) tRL + d 2 F s EEPROM Programming Current IPROG VPUP = 1.89V (Notes 5, 18) 1 mA Programming Time for a 32-Bit Segment or Page Protection tPRD (Note 19) 10 ms Programming Time for the Secret tPRS Refer to the full data sheet. ms ABRIDGED DATA SHEET |
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