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MJD122 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJD122
Description  SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJD122 Datasheet(HTML) 2 Page - Motorola, Inc

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MJD122 MJD127
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS — continued
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
ICEX
10
500
µAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
10
µAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE
1000
100
12,000
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
2
4
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 8 Adc, IB = 80 mAdc)
VBE(sat)
4.5
Vdc
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
|hfe|
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD127
MJD122
Cob
300
200
pF
Small–Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
300
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (
°C)
0
50
75
100
125
150
20
15
10
5
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
TC


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