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MJD122 Datasheet(PDF) 4 Page - Motorola, Inc

Part No. MJD122
Description  SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJD122 Datasheet(HTML) 4 Page - Motorola, Inc

   
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MJD122 MJD127
4
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB ≤ hFE/3
0.1
– 55
°C to 25°C
1
2
3
10
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
+ 0.4
103
102
101
100
– 0.2 – 0.4 – 0.6
TJ = 150°C
100
°C
REVERSE
FORWARD
25
°C
VCE = 30 V
105
+ 0.6
+ 0.2
– 0.8
– 1
– 1.2 – 1.4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
103
102
101
100
105
+ 5
– 5
θVB for VBE 25°C to 150°C
θVC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30
1
5
20
100
TJ = 25°C
300
50
70
100
0.1
2
10
50
PNP
NPN
0.5
0.2
Figure 6. Collector Cut–Off Region
Figure 7. Small–Signal Current Gain
1
f, FREQUENCY (kHz)
100
2
10
500
5000
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
3000
5
50
20
100
10,000
200
300
200
500
1000
PNP MJD127
NPN MJD122
– 4
– 3
– 2
– 1
0
+ 4
+ 3
+ 2
+ 1
0.5
0.3
7
5
IC, COLLECTOR CURRENT (AMP)
0.2
0.1
1
2
3
0.5
0.3
7
5
2000
1000
10
50
20
30
PNP
NPN
200
Figure 8. Capacitance
+ 5
– 5
– 4
– 3
– 2
– 1
0
+ 4
+ 3
+ 2
+ 1
0.7
10
0
– 0.4
+ 0.2
+ 0.4 + 0.6
– 0.6
– 0.2
+ 0.8
+ 1
+ 1.2 + 1.4
– 55
°C to 25°C
25
°C to 150°C
*IC/IB ≤ hFE/3
25
°C to 150°C
– 55
°C to 25°C
25
°C to 150°C
– 55
°C to 25°C
*
θVC for VCE(sat)
θVB for VBE
REVERSE
FORWARD
VCE = 30 V
TJ = 150°C
100
°C
25
°C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS


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