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MJ16010 Datasheet(PDF) 2 Page - Motorola, Inc

Part # MJ16010
Description  15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ16010 Datasheet(HTML) 2 Page - Motorola, Inc

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MJ16010 MJW16010 MJ16012 MJW16012
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
0.25
1.5
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)
ICER
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 15
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
VCE(sat)
2.5
3.0
3.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
VBE(sat)
1.5
1.5
Vdc
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
5.0
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
400
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
µs,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 Ω)
td
20
ns
Rose Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
µs,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 Ω)
tr
200
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30
µs,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 Ω)
ts
1200
Fall Time
IB1 = 1.3 Adc,
PW = 30
µs,
Duty Cycle
v 2.0%)
tf
200
Storage Time
Duty Cycle
v 2.0%)
(VBE(off) = 5.0 Vdc)
ts
650
Fall Time
v 2.0%)
(VBE(off) = 5.0 Vdc)
tf
80
Inductive Load (Table 2)
Storage Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100_C)
tsv
800
1800
ns
Fall Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100_C)
tfi
50
200
Crossover Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_C)
tc
90
250
Storage Time
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 150_C)
tsv
1050
Fall Time
VCE(pk) = 400 Vdc)
(TC = 150_C)
tfi
70
Crossover Time
_C)
tc
120
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2.0%


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