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AD5235 Datasheet(PDF) 2 Page - Analog Devices

Part No. AD5235
Description  Nonvolatile Memory, Dual 1024 Position Digital Potentiometers
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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AD5235 Datasheet(HTML) 2 Page - Analog Devices

 
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PRELIMINARY TECHNICAL DATA
Nonvolatile Memory Digital Potentiometers
AD5235
REV PrD 6 NOV, 2000
2
Information contained in this Product Concept data sheet describes a product in the early definition stage. There is no guarantee that the
information contained here will become a final product in its present form. For latest information contact Walt Heinzer/Analog Devices, Santa Clara,
CA. TEL(408)562-7254; FAX (408)727-1550; walt.heinzer@analog.com
ELECTRICAL CHARACTERISTICS 25K, 250K OHM VERSIONS (V
DD = +3V±10% or +5V±10% and VSS=0V, VA
= +VDD, VB = 0V, -40°C < TA < +85°C unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
1
Max
Units
DC CHARACTERISTICS RHEOSTAT MODE Specifications apply to all VRs
Resistor Differential NL2
R-DNL
RWB, VA=NC
-1
±1/4
+1
LSB
Resistor Nonlinearity2
R-INL
RWB, VA=NC
-2
±1/2
+2
LSB
Nominal resistor tolerance
∆R
TA = 25°C, VAB = VDD,Wiper (VW) = No connect
-30
30
%
Resistance Temperature Coefficent
RAB/∆T
VAB = VDD, Wiper (VW) = No Connect
50
ppm/°C
Wiper Resistance
RW
IW = 1 V/R, VDD = +5V
50
100
Wiper Resistance
RW
IW = 1 V/R, VDD = +3V
200
DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE Specifications apply to all VRs
Resolution
N
10
Bits
Integral Nonlinearity3
INL
–2
±1/2
+2
LSB
Differential Nonlinearity3
DNL
–1
±1/4
+1
LSB
Voltage Divider Temperature Coefficent
∆VW/∆T
Code = Half-scale
15
ppm/°C
Full-Scale Error
VWFSE
Code = Full-scale
–3
-1
+0
LSB
Zero-Scale Error
VWZSE
Code = Zero-scale
0
+1
+3
LSB
RESISTOR TERMINALS
Voltage Range4
VA,B,W
VSS
VDD
V
Capacitance5 Ax, Bx
CA,B
f = 1 MHz, measured to GND, Code = Half-scale
45
pF
Capacitance5 Wx
CW
f = 1 MHz, measured to GND, Code = Half-scale
60
pF
Common-mode Leakage Current7
ICM
VA = VB = VDD/2
0.01
1
µA
DIGITAL INPUTS & OUTPUTS
Input Logic High
VIH
with respect to GND
0.3•VDD
V
Input Logic Low
VIL
with respect to GND
0.7•VDD
V
Output Logic High
VOH
RPULL-UP = 2.2K
Ω to +5V
4.9
V
Output Logic High
VOH
IOH = 40µA, VLOGIC = +5V
4
V
Output Logic Low
VOL
IOL = 1.6mA, VLOGIC = +5V
0.4
V
Input Current
IIL
VIN = 0V or VDD
±1
µA
Input Capacitance5
CIL
5
pF
POWER SUPPLIES
Single-Supply Power Range
VDD
VSS = 0V
2.7
5.5
V
Dual-Supply Power Range
VDD/VSS
VSS = 0V
±2.2
±2.7
V
Positive Supply Current
IDD
VIH = VDD or VIL = GND
2
20
µA
Programming Mode Current
IDD(PG)
VIH = VDD or VIL = GND
15
mA
Read Mode Current
IDD(READ)
VIH = VDD or VIL = GND
650
µA
Negative Supply Current
ISS
VIH = VDD or VIL = GND, VDD = 2.5V, VSS = -2.5V
10
µA
Power Dissipation6
PDISS
VIH = VDD or VIL = GND
0.05
mW
Power Supply Sensitivity
PSS
∆VDD = +5V ±10%
0.002
0.01
%/%
DYNAMIC CHARACTERISTICS5, 7
Bandwidth –3dB
BW_25K
R = 12K
400
KHz
Total Harmonic Distortion
THDW
VA =1Vrms, VB = 0V, f=1KHz
0.003
%
VW Settling Time
tS
VA= VDD, VB=0V, 50% of final value
25K/250K
0.6/3/6
µs
Resistor Noise Voltage
eN_WB
RWB = 10KΩ, f = 1KHz
9
nV
√Hz
Crosstalk
CT
VA = VDD, VB = 0V, Measue VW with adjacent
VR making full scale change
-65
dB


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