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ACE7401 Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE7401 Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE7401 P-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-323 3 1 2 Ordering information ACE7401 XX + H Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.4 -1.0 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 uA VDS=-24V, VGS=0V TJ=85℃ -5 On-State Drain Current ID(ON) VDS=-5V, VGS=-4.5V -4 A Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-2.8A 0.105 0.115 Ω VGS=-4.5V, ID=-2.5A 0.125 0.135 VGS=-2.5V, ID=-1.5A 0.155 0.170 VGS=-1.8V, ID=-1.0A 0.210 0.240 Forward Transconductance Gfs VDS=-10V,ID=-2.8A 4 S Diode Forward Voltage VSD IS=-1.2A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-15V, VGS=-4.5V, ID=-2.0A 5.8 nC Gate-Source Charge Qgs 0.8 SOT-323 Description 1 Gate 2 Source 3 Drain Halogen - free CM : SOT-323 Pb - free |
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