ACE3413

P-Channel Enhancement Mode MOSFET

VER 1.4

1

Description

The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

DS(ON)

Application

Absolute Maximum Ratings

Parameter

Symbol Typical Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-3.5

A

-2.8

Pulsed Drain Current

-15

A

Continuous Source Current (Diode Conduction)

-1.4

A

Power Dissipation

1.25

W

0.8

Operating Junction Temperature

-55/150 ℃

Storage Temperature Range

-55/150 ℃

Thermal Resistance-Junction to Ambient

105

℃/W