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ACE2341 Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2341 Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE2341 P-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2341 XX + H Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.35 -0.9 Gate Leakage Current IGSS VDS=0.V, VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA VDS=-20V, VGS=0V TJ=55℃ -10 On-State Drain Current ID(ON) VDS≦-5V, VGS=-4.5V -6 A Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.3A 0.036 0.045 Ω VGS=-2.5V, ID=-2.8A 0.045 0.055 VGS=-1.8V, ID=-2.3A 0.055 0.065 Forward Transconductance Gfs VDS=-5.0V, ID=-3.3A 3 S Diode Forward Voltage VSD IS=-1.6A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-6V, VGS=-4.5V, ID≡-3.3A 8 13 nC Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 2.2 SOT-23-3 Description 1 Gate 2 Source 3 Drain Halogen - free BM: SOT-23-3 Pb - free |
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